Helena Castán、S. Dueñas、A. Gómez 等 10 位作者2010-04-16ECS Transactions
Al/ScOx/NiOx/n-Si and Al/ScOx/SiOx/n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use…
ZnO doping and propertiesSemiconductor materials and devicesSemiconductor materials and interfaces
R. Serna、Sara Núñez‐Sánchez、Pablo M. de Roque2010-04-16ECS Transactions
Nanostructured amorphous aluminum oxide (Al2O3) thin films codoped with Erbium ions (Er3+) and Si nanoparticles (Si NPs) are prepared by pulsed laser deposition. The doping structure can be controlled in such a way that Er3+ and Si NP concentrations are optimized independently, the Si NP sizes are selected and the Er3…
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceGa2O3 and related materials
Zhao-Rong Shi、Hao-Long Chen、Yeou-Yih Tsai 等 5 位作者2010-04-16ECS Transactions
InVO4 doped with Eu3+ ions had been synthesized at 950° for 6 hr in air using the sol-gel method. XRD results indicate that the crystallinity of InVO4:Eu3+ powders decreases with increasing Eu3+ ion concentrations. From the SEM images, the shapes of the InVO4 particles are uniform and like pebbles. With increasing Eu3…
Luminescence Properties of Advanced MaterialsGas Sensing Nanomaterials and SensorsTransition Metal Oxide Nanomaterials
D. J. Lockwood、N. L. Rowell、Isabelle Berbézier 等 7 位作者2010-04-16ECS Transactions
Self-assembled Ge nanodots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO2 or TiO2 layer on Si(001). The dot photoluminescence (PL) appeared primarily as a wide near-infrared band peaked near 800 meV. Using both the k•p and tight binding theoreti…
Photonic and Optical DevicesPhotonic Crystals and ApplicationsSilicon Nanostructures and Photoluminescence
Dwight Acosta、A. Guillén-Santiago、L. Castañeda 等 5 位作者2010-04-16Journal of Ceramic Processing Research
Dwight R. Acosta, A. Guillen-Santiago, L. Castaneda, A. Maldonado and M. de la L. Olvera* Instituto de Fisica, Universidad Nacional Autonoma de Mexico, IFUNAM, Apartado Postal 20-364, Mexico, D.F., 01000, Mexico. Instituto de Fisica, Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570, Mexico. Departame…
ZnO doping and properties
Hiyoyuki Masuda2010-04-16ECS Transactions
The crack tip deformation and surface potential distribution on SUS316L stainless steels were observed by SKFM and KFM. The existence of hydrogen-induced martensite was examined by the magnetic force microscope (MFM) observations. The results showed that the less noble potential region existed near the crack tip. MFM…
Ultrasonics and Acoustic Wave PropagationHydrogen embrittlement and corrosion behaviors in metalsNon-Destructive Testing Techniques
D.A. Koleva、Klaas van Breugel、J.M.C. Mol 等 4 位作者2010-04-16ECS Transactions
This work presents the preliminary tests on the performance of cathodic prevention (CPre) in reinforced mortar, subjected to aggressive (10% NaCl environment). Cathodic prevention is an electrochemical technique for minimizing, actually "preventing" any eventual corrosion of the steel bars in reinforced concrete. Ther…
Corrosion Behavior and InhibitionHydrogen embrittlement and corrosion behaviors in metalsConcrete Corrosion and Durability
Taketomo Sato、Naoki Yoshizawa、Hiroyuki Okazaki 等 4 位作者2010-04-16ECS Transactions
Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained…
Silicon Nanostructures and PhotoluminescenceNanowire Synthesis and ApplicationsAnodic Oxide Films and Nanostructures
Susumu Kuwabata、Taro Uematsu、Tsukasa Torimoto2010-04-16ECS Transactions
Emission quenching of semiconductor nanocrystals by redox molecules been studied using CdTe and ZnS-AgInS2 solid solution (ZAIS) nanocrystals. The quench behavior was investigated in terms of electric charge and electron transfer reaction. Regarding CdTe nanocrystals, it was found that charges of CdTe and redox specie…
Quantum Dots Synthesis And PropertiesAdvanced Nanomaterials in Catalysis
B. Garrido、Mariano Perálvarez、Yonder Berencén 等 5 位作者2010-04-16ECS Transactions
Si nanocrystals or nanoclusters (Si-nc) either intrinsic or doped (C, Er, Yb,...) and embedded in dielectrics (silicon oxide or nitride) are used as gate materials for integrated Si LEDs. This is becoming the material system of choice of silicon photonics to devise light emitters integrated with CMOS technology. MOSLE…
Photonic and Optical DevicesSemiconductor materials and devicesSilicon Nanostructures and Photoluminescence
Koji Fushimi、Hirofumi Kondo、Hidetaka Konno2010-04-16ECS Transactions
Anodic dissolution behaviour of titanium in ethylene glycol solution containing chloride salt was examined using a rotating disk electrode. A potential-independent dissolution current flowed depending on the rotation speed, species and concentration of chloride salts. The current controlled by the mass transfer proces…
Corrosion Behavior and InhibitionHydrogen embrittlement and corrosion behaviors in metals
Youngmin You、Hoichang Yang、Jong Won Chung 等 6 位作者2010-04-16Angewandte Chemie
Fluoreszierende Streifen: Koordinationspolymere aus Zink- oder Silberionen und Pyridinderivaten als Liganden wurden auf kontrollierte Weise in Mikroschablonen erhalten, die zuvor lithographisch in Kapillaren erzeugt wurden. Dabei resultieren stark fluoreszierende Polymermuster mit supramolekularer Struktur (siehe Bild…
Metal-Organic Frameworks: Synthesis and ApplicationsSupramolecular Chemistry and ComplexesLuminescence and Fluorescent Materials
Min-Lin Wu、Lun-Lun Chen、Jia‐Rong Wu 等 4 位作者2010-04-16ECS Transactions
A tetragonal ZrO2 film stabilized by incorporating Ge atoms from an underlying Ge layer through a thermal annealing was investigated as the gate dielectric for Ge MOS devices. Formation of a tetragonal ZrO2 film and admixture of Ge atoms into a ZrO2 film were respectively confirmed by x-ray diffraction (XRD) and x-ray…
Semiconductor materials and devicesSilicon Nanostructures and Photoluminescence
Stefano Desinan、Marta Boaro、Chiara Abate 等 6 位作者2010-04-16ECS Transactions
The redox properties of dense pellets of Ce0.50Zr0.50O2 have been investigated by temperature programmed reduction (TPR) (1023-1373K) and mild temperature oxidation (873K) cycles, X-ray powder diffraction technique (XRD), RAMAN spectroscopy and electrochemical impedance spectroscopy (EIS) have been used to characteriz…
Electrocatalysts for Energy ConversionCatalytic Processes in Materials ScienceAdvancements in Solid Oxide Fuel Cells
Mourad Frites、William B. Ingler、Shahed U. M. Khan2010-04-16ECS Transactions
Carbon modified (CM)-n-TiO2 thin film was synthesized and optimized by flame oxidation method at high temperature of 825{degree sign}C, and 16 min heating time. The natural gas and oxygen flow rates of 3.32 L/min and 2.23 L/min were found optimum to incorporate the appropriate amounts of carbon concentration in the bu…
TiO2 Photocatalysis and Solar CellsSilicon Nanostructures and Photoluminescence
Cheng-Huan Chen、Junyi Yu、Teng-Hsing Huang 等 5 位作者2010-04-16ECS Transactions
Epitaxial growth of ZnO on a tetragonal LiAlO2 (100) substrate and an orthorhombic LiGaO2 (100) substrate was examined using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Results indicated that the crystal structure plays a major role on the orientation selection. The m-plane Zn…
ZnO doping and properties
Yukihisa Nakao、Rihito Kuroda、Hiroki Tanaka 等 7 位作者2010-04-16ECS Transactions
A formation process of the silicide/Si contact with low contact resistance in the source/drain (S/D) regions has been developed in order to reduce the S/D electrodes series resistance of MOSFETs. Er that has a low Schottky barrier height (SBH) for electrons and Pd that has a low SBH for holes were selected to n+- and…
Silicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces
Harry E. Ruda、Usha Philipose、Ankur Saxena 等 12 位作者2010-04-16ECS Transactions
II-VI nanowires offer a unique combination of properties for developing blue/UV optoelectronic devices. Key to realizing this potential is managing the nanowire growth process to ensure appropriate properties are realized. Taking ZnSe as an example, we report on the influence of growth conditions (namely, growth tempe…
Quantum Dots Synthesis And Properties
Enam Alsrayheen、Eric McLeod、Richard G. Rateick 等 4 位作者2010-04-16ECS Transactions
An AC/DC spark anodizing method was used to coat the aluminum-copper (Al-Cu) alloy AA2219 with oxide films to protect them form corrosion. The effect of electrolyte solution composition and the lifetime use of the anodizing solution on the anodizing process and the oxide film properties have been investigated. In this…
Corrosion Behavior and InhibitionConcrete Corrosion and DurabilityAnodic Oxide Films and Nanostructures
Steven A. Policastro、F.J. Martı́n、Roy J. Rayne 等 8 位作者2010-04-16ECS Transactions
An experimental technique for making electrochemical measurements on isolated individual phase regions of known crystalline orientation in a duplex stainless steel is demonstrated. An ultraviolet-sensitive photoresist is used to mask the excluded portions of the sample and a 355 nm laser exposes only portions of the f…
Corrosion Behavior and InhibitionHydrogen embrittlement and corrosion behaviors in metalsNon-Destructive Testing Techniques