Materials Literature

文献浏览

按标题、摘要、年份、主题和来源检索公开元数据。结果保留作者、摘要、分类与原始来源链接。

清除
第 283008 / 298263 页 · 当前展示 5,660,141–5,660,160 / 5,965,251 条匹配结果 · 摘要仅作预览

Competing magnetic interactions in nickel ferrite nanoparticle clusters: Role of magnetic interactions

Rakesh Malik、S. Annapoorni、Subhalakshmi Lamba 等 5 位作者2008-09-15Journal of Applied Physics

The magnetic behavior of nickel ferrite nanoparticles of different sizes was studied by annealing nickel ferrite powders at temperatures ranging from 300 to 900 °C. Transmission electron microscopy studies show that the average particle sizes change from ∼8 to ∼120 nm with increasing annealing temperatures. The x-ray…

Magnetic properties of thin filmsMultiferroics and related materialsMagnetic Properties and Synthesis of Ferrites

Magnetic and microwave properties of nanocomposite films on the basis of Fe–Co–Ni particles of various shapes

V. F. Meshcheryakov、Y. K. Fetisov、A. A. Stashkevich 等 4 位作者2008-09-15Journal of Applied Physics

The problem of the physical mechanisms of collective magnetic behavior, both static and dynamic, of an assembly of ferromagnetic particles comprising a nanocomposite material has been addressed. Detailed measurements of magnetization curves and microwave absorption spectra of films prepared from chemically synthesized…

Magnetic properties of thin filmsMagnetic Properties and Synthesis of FerritesElectromagnetic wave absorption materials

Evaluation of the strains in charge-ordered Pr1−xCaxMnO3 thin films using Raman spectroscopy

A. Antonakos、Δ. Πάλλες、E. Liarokapis 等 5 位作者2008-09-15Journal of Applied Physics

Thin films of Pr1−xCaxMnO3 (x=0.5,0.6) deposited on LaAlO3 and SrTiO3 substrates have been studied by Raman spectroscopy at low temperatures in order to investigate the effect of strains from the Ca doping or the substrate. A detailed assignment of the observed bands is suggested based on the present observations and…

Magnetic and transport properties of perovskites and related materialsAdvanced Condensed Matter PhysicsElectronic and Structural Properties of Oxides

Nature of quasi-LO phonon in ZnO

Yee Yan Tay、Thiam Teck Tan、M. H. Liang 等 5 位作者2008-09-15Applied Physics Letters

The quasi-LO phonon mode is related to the specific defects that strongly affect the photonic properties of materials such as zinc oxide (ZnO). The line shapes of the quasi-LO phonon of ZnO annealed in different environments have been investigated. The experimental results show that this mode has the greatest Raman sh…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials

Structural and electronic properties of crystalline InGaO3(ZnO)m

W. J. Lee、Eun‐Ae Choi、Junhyeok Bang 等 5 位作者2008-09-15Applied Physics Letters

Based on theoretical calculations, we find that the crystal structure of InGaO3(ZnO)m consists of an alternating stack of a wurtzite (Ga∕Zn)–O block and an In–O octahedral layer. In the (Ga∕Zn)–O block, the Ga atoms favor a modulated boundary structure against a flat boundary structure. The band spectrum shows that ho…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsGa2O3 and related materials

Growth interruption studies on vertically aligned 2-3 wall carbon nanotubes by water assisted chemical vapor deposition

Shashikant P. Patole、J. H. Park、T. Y. Lee 等 6 位作者2008-09-15Applied Physics Letters

Highly aligned, 2-3 wall carbon nanotube (CNT) arrays were used to examine the kinetics of CNT growth. A growth interruption method was used to determine the in situ growth rate. The growth interruption method with a water vapor treatment or acetylene treatment during the interruption enabled the production of CNT sta…

Carbon Nanotubes in CompositesGraphene research and applicationsThermal properties of materials

Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy

Z.-Q. Fang、B. Claflin、D. C. Look 等 6 位作者2008-09-15Journal of Applied Physics

Deep level transient spectroscopy, current-voltage, and capacitance-voltage measurements are used to study interface traps in metal-on-bulk-ZnO Schottky barrier diodes (SBDs). c-axis-oriented ZnO samples were cut from two different vapor-phase-grown crystals, and Au- and Pd-SBDs were formed on their (0001) surfaces af…

ZnO doping and propertiesCopper-based nanomaterials and applicationsGa2O3 and related materials

Strain state, microstructure and electrical transport properties of LaNiO3films grown on Si substrates

Li Qiao、Xinlei Bi2008-09-15Journal of Physics D Applied Physics

LaNiO 3 films with various thicknesses were deposited on Si substrates by sputtering. The film thickness dependent strain state, microstructure and electrical properties were investigated. X-ray diffraction analysis shows that the films are generally strained with larger lattice constants than the value for bulk LaNiO…

Ferroelectric and Piezoelectric MaterialsMagnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides

Tailoring the gas sensing properties of ZnO thin films through oxygen nonstoichiometry

V. Kobrinsky、Avner Rothschild、Victor Lumelsky 等 5 位作者2008-09-15Applied Physics Letters

A comparative study of the gas sensing properties of n- and p-type ZnO films was performed. The carrier type and concentration tailored by varying the sputtering Ar/O2 mixture were examined by Hall effect measurements. The gas sensing properties were studied by monitoring changes in the dc resistance upon exposure to…

ZnO doping and propertiesGas Sensing Nanomaterials and SensorsTransition Metal Oxide Nanomaterials

Two-layer Hall-effect model with arbitrary surface-donor profiles: application to ZnO

D. C. Look2008-09-15Journal of Applied Physics

A complete two-layer Hall-effect model, allowing arbitrary donor and acceptor profiles, is presented and applied to the problem of conductive surface layers in ZnO. Temperature-dependent mobility and carrier concentration data in the temperature range of 20–320 K are fitted with an efficient algorithm easily implement…

Physics of Superconductivity and MagnetismZnO doping and propertiesMagnetic and transport properties of perovskites and related materials

Bismuth activated alumosilicate optical fibers fabricated by surface-plasma chemical vapor deposition technology

I. A. Bufetov、К.М. Голант、Sergei Firstov 等 6 位作者2008-09-15Applied Optics

Plasma chemical technology is experimentally applied to the fabrication of a Bi-activated alumosilicate-core pure-silica-cladding fiber preform. To the best of our knowledge, this is the first time this technology has been applied in this way. We measure gain efficiency at pumping by a 1058 nm wavelength Yb fiber lase…

Glass properties and applicationsPhotonic Crystal and Fiber OpticsSolid State Laser Technologies

Structural studies of iron doped 3B2O3·0.7PbO·0.3Ag2O glasses by FT-IR and Raman spectroscopies

V. Timar2008-09-15Semiconductor Physics Quantum Electronics & Optoelectronics

Glasses from xFe 2 O 3 (100-x)[3B 2 O 3 0.7PbO0.3Ag 2 O] system, with 0 x 20 mol.%, were prepared and investigated by means of two complementary spectroscopic methods, FT-IR absorption and Raman scattering in order to obtain information concerning the network structure. Both FT-IR and Raman spectroscopic techniques ha…

Luminescence Properties of Advanced MaterialsGlass properties and applicationsMineralogy and Gemology Studies

Recovery prediction of thermally aged chloroprene rubber composite using deformation test

Sung‐Seen Choi、Dong‐Hun Han2008-09-15Journal of Applied Polymer Science

Abstract The recovery prediction of chloroprene rubber (CR) composite from deformation was studied using the conventional compression set test and the circular deformation method to change a linear specimen into a circular shape. The CR composite was thermally aged at 60, 70, 80, 90, and 100°C for 1, 6, 15, and 30 day…

Polymer crystallization and propertiesPolymer Nanocomposites and PropertiesEpoxy Resin Curing Processes

Physical aging of plastoferrites under tensile stress and its effect on microwave properties

Christian Brosseau、W. Ndong2008-09-15Journal of Applied Physics

Aging phenomena in soft viscoelastic materials have been used as an important tool to investigate the physics of complexity for both scientific and practical purposes. At ambient conditions, microwave frequency-domain spectroscopy (gigahertz-FDS) is employed to investigate the electromagnetic properties at continuum l…

Multiferroics and related materialsMagnetic Properties and Synthesis of FerritesElectromagnetic wave absorption materials

Synthesis and characterization of polyaniline films using Fenton reagent

Mohamad M. Ayad、Eman Zaki2008-09-15Journal of Applied Polymer Science

Abstract The chemical oxidation of aniline to form polyaniline (PANI) films and powder samples was made using Fenton reagent as an oxidizing agent in aqueous sulfuric acid medium. The PANI films were monitored by using the quartz crystal microbalance and the electronic absorption techniques. The optimum concentration…

Electrochemical sensors and biosensorsConducting polymers and applicationsAnalytical Chemistry and Sensors

Field emission effects of nitrogenated carbon nanotubes on chlorination and oxidation

S. C. Ray、Umesh Palnitkar、C. W. Pao 等 10 位作者2008-09-15Journal of Applied Physics

With reference to our recent reports [Appl. Phys. Lett. 90, 192107 (2007); Appl. Phys. Lett. 91, 202102 (2007)] about the electronic structure of chlorine treated and oxygen-plasma treated nitrogenated carbon nanotubes (N-CNTs), here we studied the electron field emission effects on chlorination (N-CNT:Cl) and oxidati…

Carbon Nanotubes in CompositesDiamond and Carbon-based Materials ResearchIon-surface interactions and analysis

Bias dependent dielectric relaxation dynamics of electrically tuned large-scale aligned zinc oxide nanorods in nematic liquid crystal host

Prasenjit Nayek、Sharmistha Ghosh、Santanu Karan 等 5 位作者2008-09-15Applied Physics Letters

It was observed that mixed ZnO nanorods and twisted nematic liquid crystals (LCs) show highly ordered molecular system. The observed molecular relaxation arose due to a reorientation of long molecular axis of the order of 400 kHz for pure ZLI-1636, while such relaxation was shifted to a lower frequency for mixture. By…

Liquid Crystal Research AdvancementsMaterial Dynamics and PropertiesSurfactants and Colloidal Systems

Deoxidation of graphene oxide nanosheets to extended graphenites by “unzipping” elimination

Lay‐Lay Chua、Shuai Wang、Perq‐Jon Chia 等 8 位作者2008-09-15The Journal of Chemical Physics

Low-temperature scanning tunneling microscopy on alkyl-surface-functionalized graphene oxide nanosheets reveals the formation of low-dimensional graphenite nanostructures with extended pi-conjugation at deoxidation temperatures above 150 degrees C. The elimination of these alkyl chains from the surface of the nanoshee…

Advancements in Battery MaterialsGraphene research and applicationsSurface and Thin Film Phenomena

Experimental evidence of strain relaxed domain structure in (100)/(001)-oriented epitaxial lead titanate thick films grown by metal organic chemical vapor deposition

Hiroshi Nakaki、Yong Kwan Kim、Shintaro Yokoyama 等 9 位作者2008-09-15Journal of Applied Physics

Epitaxial (100)/(001)-oriented PbTiO3 films with thickness of 2.8 μm were grown on Nb-doped (100) SrTiO3 substrates by pulsed metal organic chemical vapor deposition. Complex domain structures consisting of c-domains (c1) and three types of a-domains (a1, a2, and a3) were observed by piezoresponse force microscopy in…

Ferroelectric and Piezoelectric MaterialsAcoustic Wave Resonator TechnologiesElectronic and Structural Properties of Oxides

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

D. Cherns、Louisa Meshi、I. Griffiths 等 8 位作者2008-09-15Applied Physics Letters

Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on {101¯0} planes and bounded by opposite partial screw dislocations with Burgers vectors of 1/2⟨0001⟩. The f…

ZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials