Materials Literature
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Conventional trilayer schemes alleviate the decreasing photoresist budgets as well as satisfy the antireflection issues associated with high NA imaging. However, a number of challenges still exist with standard trilayer processing, most notable among which is the lack of broad resist compatibility and trade-offs assoc…
In order to meet the growing demand for smaller and higher-performance microelectronic devices, attention has been focused on developing molecular glass photoresists which can be employed under next-generation 193-nm immersion lithography conditions. These amorphous organic compounds produce high-resolution patterns d…
The semiconductor industry is pushing the limits of resolution to sub-30nm through the extension of 193nm lithography as well as next generation techniques such as EUV lithography. Molecular glass photoresists may provide enhanced resolution and performance advantages compared to traditional polymeric resists. These o…
Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. Contaminated features were then inspected w…
EUV lithography (EUVL) is a leading candidate for printing sub-32 nm hp patterns. In order for EUVL to be commercially viable at these dimensions, a continuous evolution of the photoresist material set is required to simultaneously meet the aggressive specifications for resolution, resist sensitivity, LWR, and outgass…
Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in semiconductor manufacturing and research and development. Automated atomic force microsco…
To determine scanning electron microscopy (SEM) image resolution, we processed a wafer-based sample that demonstrates directionally isotropic, yet high frequency, details after Fourier transformation [3],[4],[5]. We developed a new fully automatable method that outputs the SEM resolution, beam shape, and eccentricity…
We have processed Ba 1+ x /2 LaNb 5− x Ti x O 15 thin films using radio-frequency magnetron sputtering. Using XRD, SEM, x-ray microprobe and RBS, the polycrystalline films have been optimized as to reach the nominal composition. Dielectric experiments have been performed on ceramics and thin films for frequencies betw…
In an effort to improve upon the sensitivity of commercial non-chemically amplified e-beam resists, four polyacrylates functionalized with α-CF3 and/or CH2CF3 alkoxy substituents were studied. The α-CF3 substituent is known to increase backbone-scission efficiency while simultaneously eliminating acidic out-gassing an…
This paper employs a direct analysis of the intensity and the phase of the diffracted light by rigorous electromagnetic field (EMF) simulations to investigate mask-induced imaging artifacts in EUV-lithography. Analysis of the diffraction efficiencies and phase differences between the diffraction orders versus mask and…
We propose a light-driven actuator capable of actuating macroscopic objects using pre-tensioned wire of NiTi shape memory alloy of a diameter of 50 µm. The use of pre-tensioned wire made it possible to avoid concentration of stress, and enabled large load to be applied. With 1.0 W Argon-ion laser beam, this actuator p…
We have examined the electronic structure of a series of metal arene monomers and polymers by near-edge X-ray absorption fine structure spectroscopy. We observe that electron-donating or -withdrawing substituents have a measurable effect on some features in the NEXAFS spectra of these species. However, more significan…
Abstract Because of the transesterification reaction between poly(butylene terephthalate) (PBT) and polycarbonate (PC), the crystallization behavior and thermal‐resistant properties of the blend have been known to be decreased. Therefore it is of importance to control the transesterification degree in PBT/PC blends. I…
In this paper we present a methodology to investigate and optimize the CD balance between the four features of a final 32nm lines and space pattern created by spacer pitch doubling. Metrology (SEM and scatterometry) was optimized to measure and separate the two lines and the two spaces of the 32nm features. In case a…
For successful implementation of extreme ultraviolet lithography (EUVL) technology for late cycle insertion at 32 nm half-pitch (hp) and full introduction for 22 nm hp high volume production, the mask development infrastructure must be in place by 2010. The central element of the mask infrastructure is contamination-f…
The main-chain type of liquid crystal (LC) polymer was prepared with a combination of bibenzoate mesogen and 2-phenyl propane spacer. It forms the fluid smectic LC. However, the smectic phase has a two-dimensional frustrated structure with a (parallel to the layer) = 12.9 Å, c (along the polymer chain) = 20.6 Å and β…
Abstract High‐quality poly(2‐phenylindole) (PPI) films were synthesized electrochemically by direct anodic oxidation of 2‐phenylindole (PI) in boron trifluoride diethyl etherate (BFEE). The onset oxidation potential of PI in this medium was measured to be only 0.83 V versus a saturated calomel electrode (SCE), which w…
Abstract Technological conditions have been developed for the preparation of nanocomposite phosphors based on porous InP, GaP and GaAs semiconductor as well as Al2O3 and TiO2 dielectric templates doped with rare earth and transition metal ions. Semiconductor and dielectric templates are prepared by electrochemical tre…
For the commercialization of extreme ultraviolet lithography (EUVL), discharge or laser produced, pulsed plasma light sources are being considered. These sources are known to emit into a broad range of wavelengths that are collectively referred to as the out-of-band (OOB) radiation by lithographers. Multilayer EUV opt…
A critical issue preventing the implementation of 193nm immersion lithography (193i) to the 32nm node is the availability of high refractive index (n > 1.8) and low optical absorption fluids. To overcome these issues, we have synthesized high refractive index nanoparticles and introduced them into the immersion fluid…