Kenzo Maehashi、Hirokazu Ozaki、Yasuhide Ohno 等 7 位作者2007-01-08Applied Physics Letters
The authors fabricated a single quantum dot in a single-walled carbon nanotube (SWCNT) channel using focused-ion-beam techniques. They used this technique to form two tunnel barriers, constituting a single quantum dot, by introducing two damaged regions with a separation of 50nm into a SWCNT channel. Electrical proper…
Carbon Nanotubes in CompositesAdvanced Electron Microscopy Techniques and ApplicationsQuantum-Dot Cellular Automata
A. G. Kyurkchan、Е. А. Скородумова2007-01-08Acoustical Physics
The pattern equations method is extended to solving three-dimensional problems of wave diffraction by an ensemble of bodies. The method is based on the reduction of the initial problem to a system of N ( N is the number of scatterers in the ensemble) integro-operator equations of the second kind for the scattering pat…
Material Properties and Applications
B. R. Pujada、F.D. Tichelaar、G. C. A. M. Janssen2007-01-08Applied Physics Letters
Tungsten carbide-diamond like carbon (WC-DLC) multilayer coatings have been prepared by sputter deposition from a tungsten-carbide target and periodic switching on and off of the reactive acetylene gas flow. The stress in the resulting WC-DLC multilayers has been studied by substrate curvature. Periodicity and microst…
Metal and Thin Film MechanicsDiamond and Carbon-based Materials ResearchForce Microscopy Techniques and Applications
Li Ma、Jijun Zhao、Jianguang Wang 等 5 位作者2007-01-08Physical Review B
First-principles calculations have been conducted to investigate the magnetic properties of $3d$ and $4d$ transitional-metal (TM) atoms doped in hydrogen-passivated silicon quantum dots. The TM impurities exhibit almost identical magnetic behavior in the quantum dots of different sizes. The magnetic moments for most $…
ZnO doping and propertiesSemiconductor materials and devicesSilicon Nanostructures and Photoluminescence
In-Mook Choi、Sam-Yong Woo、Han‐Wook Song2007-01-08Applied Physics Letters
A low-pressure detection technology utilizing the field emission of carbon nanotubes (CNTs) is introduced and its performance is characterized. To overcome the limitations of conventional ionization gauges, the CNTs had been proposed as an electron source. However, the simple triode structure of previous CNT pressure…
Carbon Nanotubes in CompositesForce Microscopy Techniques and ApplicationsMechanical and Optical Resonators
Byeongchul Ha、Cheol Jin Lee2007-01-08Applied Physics Letters
In situ potassium (K)-doped single-walled carbon nanotube (SWCNT) was synthesized using a hydrogen arc-discharge method. X-ray photoelectron spectroscopy analysis showed that the K-doped SWCNTs consisted of 0.12% K mass composition. The K-doped SWCNTs showed the lower turn-on electric field of 2.0V∕μm at a current den…
Carbon Nanotubes in CompositesGraphene research and applicationsDiamond and Carbon-based Materials Research
Sergio A. M. Lima、Marian Rosaly Davolos、Welber G. Quirino 等 5 位作者2007-01-08Applied Physics Letters
Europium(III)-containing zinc oxide thin films (1, 5, 8, and 10at.%) were prepared from Pechini’s solution and used as active layers in thin-film electroluminescent devices. By applying a low bias steady state voltage (10–50V) it was possible to observe electroluminescence of the device. By increasing the rate Eu3+∕Zn…
ZnO doping and propertiesPerovskite Materials and ApplicationsOrganic Light-Emitting Diodes Research
Young‐Kuk Kim、Uk Hwang、Yong Jai Cho 等 7 位作者2007-01-08Applied Physics Letters
Changes in the electrical resistance of nitrogen incorporated Ge2Sb2Te5 (NGST) films were investigated as a function of nitrogen content by four-point probe and ac two-point probe methods. Some nitrogen is initially located inside the cubic structure, resulting in a significant increase in crystalline temperature and…
Glass properties and applicationsChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides
Laurent Chaput、G. Hug、P. Pécheur 等 4 位作者2007-01-08Physical Review B
The electronic structure and the thermoelectric tensor are calculated for the 312 MAX phases ${\mathrm{Ti}}_{3}\mathrm{Si}{\mathrm{C}}_{2}$, ${\mathrm{Ti}}_{3}\mathrm{Ge}{\mathrm{C}}_{2}$, and ${\mathrm{Ti}}_{3}\mathrm{Al}{\mathrm{C}}_{2}$. The thermoelectric tensor is shown to be anisotropic in all cases. However, fo…
Aluminum Alloys Composites PropertiesMXene and MAX Phase MaterialsFerroelectric and Negative Capacitance Devices
Ji‐Yong Park2007-01-08Applied Physics Letters
A defect whose electron transmission probability can be controlled by electric field is intentionally created on a metallic single-walled carbon nanotube (SWCNT) with a voltage pulse from a tip of an atomic force microscope (AFM). Localized characteristics of the created defect are elucidated with local electrical pro…
Carbon Nanotubes in CompositesForce Microscopy Techniques and ApplicationsMechanical and Optical Resonators
Yen‐Zen Wang、Wen‐Yi Chen、Chao‐Chen Yang 等 5 位作者2007-01-08Journal of Polymer Science Part B Polymer Physics
Abstract A nanoporous additives, polyhedral oilgomeric silisesquioxane containing eight functional hexafluorine groups, octakis(dimethylsiloxyhexafluoropropyl ether)silsesquioxane (OF) has been synthesized and blended with the UV‐cured epoxy resin. The OF containing (10%) epoxy has significantly lower dielectric const…
Advanced ceramic materials synthesisSynthesis and properties of polymersSilicone and Siloxane Chemistry
Haiming Fan、Zhenhua Ni、Yuan Ping Feng 等 7 位作者2007-01-08Applied Physics Letters
Photoluminescence (PL) and Raman spectroscopies of CdSe∕ZnS core/shell quantum dots (QDs) were studied under hydrostatic pressure (0–160kbars) at room temperature. Two phase transitions, at 69 and 79kbars, respectively, were observed, which correspond to wurtzite-rocksalt and rocksalt-cinnabar structural transformatio…
Semiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films
Xiaoyao Liang、Y. Chen、Lemin Chen 等 5 位作者2007-01-08Applied Physics Letters
Electric switching and memory effects were observed on devices composed of a RbAg4I5 film sandwiched between Ag and Pt electrodes. The RbAg4I5 films were prepared by pulsed laser deposition and the lateral size of devices was scaled down to 300nm by focused ion beam lithography. The device can be switched between high…
Semiconductor materials and devicesAdvanced Memory and Neural ComputingPhase-change materials and chalcogenides
Jae-Hyeok Shim、Young Whan Cho、Sang Chul Kwon 等 5 位作者2007-01-08Applied Physics Letters
Molecular dynamics simulations of the interaction between a screw dislocation and a coherent bcc Cu precipitate in bcc Fe indicate that the screw dislocation stress field assists a martensitic transformation into a close-packed structure for precipitate diameters larger than 1.8nm, resulting in a stronger obstacle to…
Microstructure and mechanical propertiesMicrostructure and Mechanical Properties of SteelsFusion materials and technologies
Jun Miao、Jie Yuan、Heting Wu 等 7 位作者2007-01-08Applied Physics Letters
Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-orient…
Ferroelectric and Piezoelectric MaterialsMagnetic and transport properties of perovskites and related materialsMultiferroics and related materials
Go Murasawa、Satoru Yoneyama、Toshio Sakuma2007-01-08Smart Materials and Structures
The main purpose of this paper is to investigate the local deformation arising in NiTi plate subjected to stress concentration during tensile loading. First, a test system is constructed on the basis of digital image correlation (DIC) in order to measure the local strain distribution over the surface of the specimen.…
Shape Memory Alloy Transformations
Andreas Kraemer、Márcia Russman Gallas、J. A. H. da Jornada 等 4 位作者2007-01-08Physical Review B
The thermoelectric material ${\mathrm{CoSb}}_{3}$, with skutterudite structure, was subjected to high pressures using a diamond anvil cell up to $40\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. Above $20\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ this compound undergoes an irreversible isosymmetric transition to a phase that…
Advanced Thermoelectric Materials and DevicesRare-earth and actinide compoundsThermal properties of materials
Zuzana Kramárová、Pavol Alexy、Ivan Chodák 等 11 位作者2007-01-08Polymers for Advanced Technologies
Abstract Polymeric materials from renewable resources have been tested as additives for rubber blends and vulcanisates. Their influence on the vulcanisation process, tensile strength properties and dynamical‐mechanical properties has been studied and compared with silica . The corn starch, collagen hydrolysate, corn p…
Polymer crystallization and propertiesPolymer Nanocomposites and Propertiesbiodegradable polymer synthesis and properties
L. Benisvy、R. Kannappan、Yu‐Fei Song 等 12 位作者2007-01-08European Journal of Inorganic Chemistry
Abstract The new square‐planar Ni II –N 2 O 2 complex [Ni( Me L)] ( 1 Me ), where Me L stands for the dianionic phenolato form of N , N′ ‐bis(3,5‐di‐ tert ‐butyl‐salicylidene)‐4,5‐dimethyl‐1,2‐phenylenediamine ( Me LH 2 ), has been synthesised and fully characterised. X‐ray crystallography was also used for the charac…
Metal complexes synthesis and propertiesMagnetism in coordination complexesMetal-Catalyzed Oxygenation Mechanisms
Min-Ho Kwon、Bong-Sub Lee、Stephanie N. Bogle 等 9 位作者2007-01-08Applied Physics Letters
The phase change material Ge2Sb2Te5 is widely investigated for use in nonvolatile memories. It has been reported that the crystallization speed depends on the thermal history, indicating that structural differences exist between amorphous states. The authors apply fluctuation electron microscopy to quantify difference…
Chalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesNonlinear Optical Materials Studies